Abstract
We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25 K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D− states in the upper Hubbard band due to the accumulation of the charge injected by current.
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