Abstract
We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.
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