Abstract
Resistive switching (RS) random access memory (ReRAM) has been paid great attention for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple structure. In this work, we fabricated Pt/CeO2-x/Pt resistive memory device by spin-coated method. The RS behavior is demonstrated. And the negative differential resistance (NDR) effect was observed during the set processes. By comparing with current magnitude of NRD effect reported in the literature, we construct and analyze the interface trap and deep level defect models. This work opens up a new view for insight of the influence of defect on ReRAM performance.
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