Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure

Sunhae Shin,Kyung Rok Kim,Min Woo Ryu

doi:10.1109/snw.2012.6243340

Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure

Sunhae Shin, Kyung Rok Kim + Show 1 more

https://doi.org/10.1109/snw.2012.6243340

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Publication Date: Jun 1, 2012

Citations: 3

Affiliation: Ulsan National Institute of Science and Technology

#Negative Differential Resistance Devices #Peak-to-valley Current Ratio + Show 7 more

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Abstract

Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> based on silicon nanowire structure.

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