Abstract

We review the occurrence of negative differential resistance (NDR) and its consequence for electric field domain formation in semiconductor superlattices. Transport and optical experiments are presented to determine the origin of NDR and the conditions for domain formation. The strongly nonlinear relation between drift velocity and field strength in conjunction with a large carrier density, which can be introduced either by doping or by optical excitation, leads to the formation of electric field domains in superlattices.

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