Abstract
Bias, frequency and temperature-dependent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative capacitance phenomenon has been observed. Unlike in other devices, even up to 1 MHz in HIWIP, the negative capacitance value keeps increasing with frequency, giving a stronger effect. The origin of this effect is believed to be due to the carrier capture and emission at interface states. Fitting data based on charging-discharging current and the inertial conducting current model show good agreement with the experimental observations.
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