Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons

Abstract

Silicon p+-n junction diodes irradiated with 3.5-MeV electrons (with the dose of 4 × 1016 cm−2) are studied. The diodes’ inductance (L) was measured at a frequency f = 1 MHz with the amplitude of alternating current equal to 0.25 mA. Simultaneously with measurements of L at alternating current, a direct current was passed through the forward-biased diode, which brought about the injection of minority charge carriers into the base. In order to identify both of the mechanisms that give rise to the inductive-type impedance in irradiated diodes with the p+-n junction and the main radiation defects that are directly involved in the formation of this impedance, irradiated samples were annealed isochronously in the temperature range Ta = 225–375°C with sub-sequent study of the main characteristics of the defects by deep-level transient spectroscopy. It is shown that the inductive-type impedance in irradiated diodes is caused by the processes of capture and retention of charge carriers injected into the base at the trapping centers for a time ∼1/2f, i.e., for a half-period of oscillations. It is also shown that the trapping centers are the vacancy-oxygen complexes introduced by irradiation with electrons.