Abstract
Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC and inductance induced by polarization switching, based on an as-deposited nanoscale ferroelectric zirconium oxide (ZrO2) layer (nano-f-ZrO2). The experimental results are demonstrated in nano-f-ZrO2, including resistor–inductor–capacitor oscillations, positive reactance in Nyquist impedance plot, enhancement of capacitance, and sub-60 mV/dec subthreshold swing of nanoscale transistors. The theoretical analysis shows that ferroelectric polarization switching yields an effective electromotive force which is similar in behavior to Lenz’s law, leading to inductive and NC responses. Nano-beam electron diffraction reveals ferroelectric multi-domains in nano-f-ZrO2. Under small-signal operation, the switching of net polarization variation in ferroelectric multi-domains contributes to the ferroelectric inductance and NC. Nano-f-ZrO2 provides a pronounced inductance compared to conventional inductors, which would have impacts in a variety of applications including transistors, filters, oscillators, and radio-frequency-integrated circuits.
Highlights
Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years
We report experimental observations of the inductance caused by ferroelectric polarization switching under both large- and small-signal operations
We theoretically show that ferroelectric polarization switching produces an “effective ferroelectric-induced electromotive force,” which results in a decrease of the voltage drop across the ferroelectric layer
Summary
Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC and inductance induced by polarization switching, based on an as-deposited nanoscale ferroelectric zirconium oxide (ZrO2) layer (nano-f-ZrO2). The experimental results are demonstrated in nano-f-ZrO2, including resistor–inductor–capacitor oscillations, positive reactance in Nyquist impedance plot, enhancement of capacitance, and sub-60 mV/dec subthreshold swing of nanoscale transistors. From the viewpoint of the phase of impedance, the behavior of NC seems to be “inductance-like”[3] Among these studies, experimental evidences of the inductance originating from ferroelectric polarization switching have not been clearly demonstrated. The ferroelectric multi-domains in a nanoscale ZrO2 layer, which are responsible for the small-signal operation of the ferroelectric inductance and NC, are observed via the nano-beam electron diffraction (NBED) characterization. The NC junctionless transistor (NC-JLT) with SS
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