Abstract
We explicate the negative capacitance (NC) effect in MOS structures through TCAD simulation, and find the influence of electric field variation in ferroelectric layer. Furthermore, pre-researched time-dependent NC effect is explained in more detail. For this purpose, the electric field and potential difference in the ferroelectric layer are analyzed based on the measured data of metal-ferroelectric-metal (MFM) capacitors, and then the parameters for the occurrence of the NC effect in the NCFET were analyzed. This establishes the conditions necessary for the successful operation of the NCFET.
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