Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Abstract

A silicon on insulator (SOI)-like bulk silicon (SLBS) MOSFET has been recently reported. An ‘n/p-/n+’ structure was contained in SLBS P Metal Oxide Semiconductor (PMOS) device, with ‘p-’ is made of 4H-SiC. This p-layer is fully depleted. In this work, negative bias temperature instability (NBTI) of SLBS pMOSFET is studied and compared with that in bulk and Fully Depleted (FD) SOI PMOSFET. The effects of stress temperature and body bias on NBTI of SLBS device are also be studied in this work. The work demonstrates an advantage of SLBS over bulk and FD SOI devices.