Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators

Abstract

Negative bias temperature instability and Fowler-Nordheim injection measurements have been performed on p-channel field effect transistors. For Fowler-Nordheim injection a comparison of the threshold voltage shift and the reduced channel transconductance shows similar linear behavior to that observed for hot electron stressing of n-channel devices. Comparison for bias temperature instability shows dramatically different behaviors. Simultaneous negative bias temperature instability and Fowler-Nordheim injection lead to potentially significant errors in the estimation of the reliability lifetime.