Abstract
Summary form only given. This paper reports detailed measurements of device degradation in silicon-on-sapphire (SOS) multi-edge n-channel MOSFETs (NMOS) caused by a negative bias-temperature (NET) stress on the gate. The stressed NMOS devices exhibit a negative shift in the threshold voltage, V/sub th/, and an increase in leakage current, I/sub lk/. In contrast, edgeless NMOS devices show no significant changes in their voltage and current characteristics. It is therefore believed that the degradation in the multi-edge NMOS devices is caused by a threshold voltage shift in the edge transistor.
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