Abstract
We observed the negative anisotropic magnetoresistance (AMR) effect in γ'-Fe4N epitaxial films grown on SrTiO3(001) substrates using molecular beam epitaxy. The AMR ratio was increased immediately below 50 K. The angular dependence of AMR ratio contained not only cos 2θ but also cos 4θ components, and the sign of Fourier coefficient of cos 4θ term was changed around 10 K. These behaviors are in good agreement with those already reported for γ'-Fe4N pseudo-single-crystal films on MgO(001) substrates formed by sputtering. These behaviors might be attributed to temperature dependence of electronic or magnetic structure specific to γ'-Fe4N.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
