Abstract
The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-/spl mu/m wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-/spl mu/m absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.
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