Abstract
The authors describe a method for the determination of free carrier profiles in semiconductors which is particularly useful in the presence of high trap densities. The experimental procedure is based on high-frequency differential capacitance measurements of a Schottky or non-symmetrical pn junction which alternately undergoes forward bias and slow ramp reverse bias. The transient capacitance measurements just before emission occurs and after the traps emptying associated with the reverse biasing ramp (by the boxcar technique) give: the non-equilibrium CNE-V characteristics in which the space charge is controlled by the free carriers only: the CE-V characteristics at thermal equilibrium. The authors propose the acronym NECM (non-equilibrium capacitance method) for the technique. The method is tested with two commonly used treatments of silicon in device technology: gold-diffused and ion-implanted silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
