Abstract
Near-surface regions of Cd1−xMnxTe and Hg1−xCdxTe epilayers (down to tens of angstroms) on (001) GaAs substrates have been characterized by extremely asymmetric Bragg reflection topography (EABRT) with the laboratory x-ray source condition and a Lang camera, using x-ray grazing incidence angles less than the critical angle for total external reflection. The experimental topographs obtained in the present work illustrate the potential of the EABRT technique for nondestructive characterization of near-surface regions of crystals. The resolution of an image in EABRT is discussed in detail.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
