Abstract
Ultrathin films of Bi and Pb have been grown incrementally under ultra-high vacuum conditions on SrTiO3 substrates held below 10K. The substrates were provided with metal gates on their rear surfaces. For films with sheet resistance in excess of the quantum resistance for pairs, the conductance was found to increase with gate voltage of either sign. This response, which was temporally stable, was largest in the most resistive films where the conductance changed by the order of 50 percent with a gate bias of 20V. The effect decreased in magnitude with decreasing sheet resistance and increasing temperature. It vanished above a characteristic temperature, and was not present in superconducting films with sheet resistances (measured at 14K) less than the quantum resistance for pairs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
