Abstract
Near-ideal abrupt heterojunction InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge, resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively, and a very low collector offset voltage VCE,OFF = 14 mV was measured for 5 × 12 µm2 self-aligned DHBTs.
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