Near-infrared quantum cutting via energy transfer in Bi3+, Yb3+ co-doped Lu2GeO5 down-converting phosphor

Abstract

In recent years, down-converting phosphors have grown rapidly and been still growing for their potential to significantly improve the photoelectric conversion efficiency of silicon-based solar cells. However, the discovery of new optical materials with optimized properties (in terms of emission intensity, chemical and thermal stability and quantum yield) would still be of the utmost importance. Herein, we report a novel down-converting phosphor Lu2GeO5: Bi3+, Yb3+. Our research results show that the energy transfer efficiency from Bi3+ to Yb3+ in Lu2GeO5 is as high as 65%. Via such an energy transfer from Bi3+ to Yb3+, an absorbed ultraviolet photon gives rise to almost two emitted infrared photons. The theoretical quantum yield of Lu2GeO5: Bi3+, Yb3+ system is calculated to reach up to 165%. The mechanism of the energy transfer from Bi3+ to Yb3+ is proved to be an electric dipole-dipole interaction. Meanwhile, Lu1.87GeO5: 0.03Bi3+, 0.10 Yb3+ phosphor exhibits an excellent resistance against thermal quenching. The present investigation provides people a new down-converting phosphor Bi3+, Yb3+ co-doped Lu2GeO5 with near-infrared quantum cutting to achieve high photoelectric conversion efficiency of silicon-based solar cells.