Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes**Project supported by the National Key Research and Development Program, China (Grant Nos. 2016YFB0401702 and 2017YFE0120400), the National Natural Science Foundation of China (Grant Nos. 61875082 and 61405089), the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, China (Grant No. 2017KSYS007), the Natural Science Foundation of

Abstract

This paper reviews the recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX = PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.