Abstract

We developed a three-step colloidal synthesis of near-infrared (NIR) active Cu–In–Se (CISe)-based nanocrystals (NCs) via a sequential partial cation exchange realized in one pot. In the first step, binary highly copper deficient Cu2–xSe NCs were synthesized, followed by a partial cation exchange of copper to indium ions, yielding CISe NCs. This reaction allows for a precise control of the composition of the resulting NCs through a simple variation of the ratio between guest-cation precursors and parent NCs. To enhance the stability and the photoluminescence (PL) properties of the NCs, a subsequent ZnS shell was grown in the third step, resulting in CISeS/ZnS core/shell particles. These core/shell hetero-NCs exhibited a dramatic increase in size and a restructuring to trigonal pyramidal shape. The shell growth performed at a relatively high temperature (250 °C) also led to anion exchange, in which sulfur replaced part of selenium atoms close to the surface of the NCs, forming alloyed CISeS core structure. ...

Highlights

  • Colloidal semiconductor nanocrystals (NCs) have gained increasing scientific attention due to their unique size- and shape-dependent optoelectronic properties dictated by quantum confinement.[1−3] They hold a huge potential as materials to be employed in optoelectronic devices as well as in the field of biomedicine.[3−5] So far, the study of the semiconductor NCs has mainly focused on binary II−VI, IV−VI, and to some extent on III−V compounds, MX (M2+ Cd2+, Hg2+, Pb2+; M3+ In3+; X2− S2−, Se2−, Te2−; X3− P3−), which are promising for optoelectronic and photovoltaic applications.[6−8]Despite their advantages, they contain toxic elements, which can be hazardous when released to the environment

  • In the past decades, the focus of research has broadened out on copper chalcogenide-based ternary and quaternary compounds, e.g. CuInS(Se)[2] (CIS(Se)), Cu−Zn− In−S(Se) (CZIS(Se)), and Cu2ZnSnS(Se)[4] (CZTS(Se)), which have proven themselves as outstanding alternatives to the II−VI and IV−VI families of semiconductor nanoparticles.[9−11] An advantage of these materials consists in their low toxicity, giving them permission to widen the range of applications

  • Thereafter, In3+ ions were incorporated into these Cu2−xSe NCs, forming ternary CISe nanoparticles by means of a partial cation exchange (CE) reaction, i.e. a replacement of a part of the host copper cations by the guest indium cations in the crystal structure

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Summary

■ INTRODUCTION

Colloidal semiconductor nanocrystals (NCs) have gained increasing scientific attention due to their unique size- and shape-dependent optoelectronic properties dictated by quantum confinement.[1−3] They hold a huge potential as materials to be employed in optoelectronic devices as well as in the field of biomedicine.[3−5] So far, the study of the semiconductor NCs has mainly focused on binary II−VI, IV−VI, and to some extent on III−V compounds, MX (M2+ Cd2+, Hg2+, Pb2+; M3+ In3+; X2− S2−, Se2−, Te2−; X3− P3−), which are promising for optoelectronic and photovoltaic applications.[6−8]. By employing bis(trimethylsilyl)selenide as a chalcogenide precursor at relatively high temperatures (280−360 °C), Allen et al demonstrated the synthesis of 2−6 nm CISe NCs.[35] Nose et al synthesized 1.2− 5.6 nm CISe NCs at 320 °C, whose emission shifted from 838 to 918 nm with increasing reaction time.[45] For the purpose of in vivo imaging, Cassette et al developed a one-pot synthetic route, yielding CISe/ZnS NCs with PL spectra tunable from 700 to 1000 nm depending on the particle size (from ∼2 to ∼5 nm in diameter).[12] Zhong et al prepared ∼3.4 nm CISe NCs at moderate temperatures (≤200 °C), which exhibited emission in the red and the NIR region (∼600−850 nm).[26]. 0.02 mW to avoid sample heating under the microscope objective (100× for 514.7 nm and 40× for 325 nm excitation)

■ RESULTS AND DISCUSSION
■ CONCLUSIONS
■ ACKNOWLEDGMENTS
■ REFERENCES
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