Abstract
With the help of the recently reported model of the near-field thermoradiative electron device (NFTRED), we propose a new model of the NFTRED, in which the thermoradiative cell (TRC) is made of InSb-based p-type and n-type semiconductors and the low-temperature side of the device is made of SiC. We investigate the performance of the nonideal NFTRED, where the irreversible heat exchange between the SiC and the ambient is taken into account and the temperature of SiC is determined by an energy balance equation. The maximum power output density and efficiency of the nonideal NFTRED are calculated, and the optimum selection criteria of some key parameters such as the vacuum gap, power output density, and efficiency are provided. The results obtained here will be helpful for the optimum design and operation of practical NFTREDs.
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