Year-end Sale % OFF 
Abstract
Near-field scanning optical microscopy, in which an uncoated fiber tip is used for delivering excitation light and picking up photoluminescence, is applied for diagnosing defects in semiconductor devices. Using this high resolution, potentially subdiffraction limited, and fast acquisition time scanning μ-photoluminescence (PL) technique, we are able to locate nonluminescing defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of the measured spectral PL intensity are also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
