Abstract
We demonstrate capabilities of near-field scanning optical microscopy (NSOM) in collection and illumination mode. NSOM in collection mode was used for high resolution characterization of optical field of patterned light emitting diodes. In the scanned near field, we resolved enhanced emission from patterned regions with high resolution images of emitting surface. Also NSOM in illumination mode was used for patterning of predefined structures on semiconductor surfaces. For the diode patterning the electron beam direct writing lithography was used. Using NSOM lithography we prepared predefined planar structures in GaP surface. In the small open areas of predefined surface structure GaP nanowires were grown.
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