Near-field radiative heat transfer between nanoporous GaN films

Abstract

Photon tunneling effects give rise to surface waves, amplifying radiative heat transfer in the near-field regime. Recent research has highlighted that the introduction of nanopores into materials creates additional pathways for heat transfer, leading to a substantial enhancement of near-field radiative heat transfer (NFRHT). Being a direct bandgap semiconductor, GaN has high thermal conductivity and stable resistance at high temperatures, and holds significant potential for applications in optoelectronic devices. Indeed, study of NFRHT between nanoporous GaN films is currently lacking, hence the physical mechanism for adding nanopores to GaN films remains to be discussed in the field of NFRHT. In this work, we delve into the NFRHT of GaN nanoporous films in terms of gap distance, GaN film thickness and the vacuum filling ratio. The results demonstrate a 27.2% increase in heat flux for a 10 nm gap when the nanoporous filling ratio is 0.5. Moreover, the spectral heat flux exhibits redshift with increase in the vacuum filling ratio. To be more precise, the peak of spectral heat flux moves from ω = 1.31 × 1014 rad⋅s−1 to ω = 1.23 × 1014 rad⋅s−1 when the vacuum filling ratio changes from f = 0.1 to f = 0.5; this can be attributed to the excitation of surface phonon polaritons. The introduction of graphene into these configurations can highly enhance the NFRHT, and the spectral heat flux exhibits a blueshift with increase in the vacuum filling ratio, which can be explained by the excitation of surface plasmon polaritons. These findings offer theoretical insights that can guide the extensive utilization of porous structures in thermal control, management and thermal modulation.