Abstract
A method, based on macroscopic elastic theory, is presented, which predicts the nearest-neighbor distances in strained pseudobinary semiconductor thin films. The method applies to films grown on the (001) face of substrates with the zincblende or diamond structure. Based on crystallographic and elastic parameters, the bond lengths are determined through minimization of the elastic energy calculated in the framework of the valence force field method. Good agreement with experimental data is obtained by considering only bond stretching terms. The effectiveness of this method is shown in a number of cases taken from literature.
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