Abstract
The near-band-edge photoluminescence of ZnSe crystals grown from an In solution has been studied in order to elucidate a transition mechanism of the room-temperature blue emission band which is typically observed in the photoluminescence of the low-resistivity ZnSe crystals and the electroluminescence of the ZnSe diodes of metal-insulator-semiconductor (MIS) structure. On the basis of the temperature-dependent behavior of the various near-band-edge emission bands, i.e., changes in the peak energies and the intensities over the wide temperature range, the room-temperature blue emission is attributed to the recombination between free holes and donor electrons. Special attention is paid to a relation between this emission and the low-temperature exciton emission due to the recombination of excitons bound to the ionized donor.
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