Abstract
Near-surface structures and the electronic states of polar InN were investigated by hard photoelectron spectroscopy (HAXPES) and hard X-ray photoelectron diffraction (HXPED). HAXPES results revealed that the band bending of N-polar InN was larger than that of In-polar InN. It was found from HXPED that the near-surface structure of the In-polar InN was close to the ideal wurtzite structure. On the other hand, for the N-polar InN, amorphous structure and In crystal domains were formed near surface as well as the formation of wurtzite structure.
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