Year-end Sale % OFF 
Abstract
We report the observation of very large ionization rate ratios (β/α) in multiple graded-well Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As avalanche photodiodes (APD's) grown by molecular beam epitaxy (MBE). The multiplication effects can be explained by impact ionization across the valance band-edge discontinuity of thermally generated holes which are dynamically stored in the wells. Since electrons are not confined in the graded structure, there is no multiplication of electrons by this process. This is the first observation of near-single carrier-type multiplication in a III-V semiconductor material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
