Abstract
We present a terahertz (THz) amplitude modulation method with near perfect E-field amplitude modulation depths that is based on impedance matching in VO2 thin films during the thermally induced insulator-metal transition (IMT). It was observed that the impedance matching-induced THz amplitude modulation was sensitive to the resistance switching characteristics of the VO2 thin films. By designing the VO2 thin films to have four orders of magnitude of change in resistance during the IMT, we experimentally achieved an E-field amplitude modulation depth of 94.5% (intensity modulation depth of 99.7%) between the insulator phase of VO2 and the impedance matching state, and an E-field amplitude modulation depth of 97.6% (intensity modulation depth of 99.94%) between the impedance matching state and the metallic phase of VO2 at 0.5 THz. The experimental results were consistent with the results of simulations based on the transmission matrix model.
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