Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

Abstract

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s 3/2(Γ8) → 2s 3/2(Γ8) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 108 cm−3) and in a doped p-InP crystal (p=3.6×1017 cm−3). Moreover, a new line, associated with the transition 1s 3/2(Γ 8) → 2p 3/2(Γ8) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons.