Abstract
Hot electron photodetector is a typical hot electron optoelectronic device, which can realize the narrow band photoelectric detection with high tunability and sensitivity. The Tamm plasmons (TPs) based on the planar metal film/distributed Bragg reflector (DBR) has the advantages of simple structure, low manufacturing cost, and high absorption efficiency. A multilayer thin film device structure for high-performance near-infrared hot electron metal-semiconductor-metal photodetectors is proposed. The structure is based on Ag/Ge2Sb2Te5 (GST) Schottky barrier and TPs formed by SiO2/MoS2 DBR. The simulation results of hot electron emission theory show that DBR can effectively extend the absorption spectrum of Ag film and the response spectrum of the device, and enhance the absorption rate of Ag film and the response of the device. The responsivity which is up to 53 mA/W can be obtained by adjusting the structure parameters of the DBR, the thickness of the Ag film, and the GST layer. At the same time, we also propose a digital display system based on the arrangement of crystalline GST and amorphous GST. It provides a new way for the realization of high-performance near-infrared hot electronic devices and is conducive to expanding the application field of hot electronic photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
