Abstract
This study systematically investigated the Cr3+-doped ZnGa2O4 electroluminescent (EL) device, demonstrating the emission of near-infrared (NIR) light. The ZnGa2O4:Cr3+ film was prepared by a facile and cost-effective method within all-air atmosphere processes. It consists of a naturally grown amorphous SiOx and an optically active ZnGa2O4:Cr3+ layer. Under a sinusoidal voltage waveform, the device emits an NIR spectrum without the need for additional background gas or other implantation methods. The proposed mechanism suggests that light generation occurs through hot electrons released from the amorphous SiOx layer, injected into the active layer, leading to impact-ionization. The optical characteristics of the EL device are presented, and its response to applied polarities is thoroughly investigated. Finally, given the cost-effectiveness of our EL device preparation, this proposed research is of considerable importance for advancing the development of EL devices in silicon photonics.
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