Abstract
We discuss the design, fabrication and characterisation of optical microcavities suitable for application with single, site-selected InAs/InP quantum dots emitting around λ=1550nm. The fabrication procedures that we employ allow high finesse cavities to be constructed around single quantum dots with a known nucleation site and ground state emission energy. Two types of cavity are explored: (i) pillar cavities in which the quantum dot can be located within the semiconductor spacer layer between two dielectric Bragg reflectors and (ii) photonic bandgap cavities employing textured InP membranes. For 1μm diameter, SiO2/Ta2O5 pillar cavities we obtain cavity quality factors, Q, of 1500 and for membrane cavities, Q values of 850.
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