Abstract
The experimental observation of photorefractive self focusing in Sn(2)P(2)S(6) : Te bulk crystals at 1.06 mum wavelength is presented. Steady state self focusing is reached as fast as 15 ms for an input peak intensity equal to 160 W/cm(2). Self focusing is maximum for input peak intensities around 15 W/cm(2) and is decreasing for intensities below and above this value.
Highlights
Self-trapped beams in photorefractive crystals can generate their own waveguide [1]
Much of the interest in near infrared (IR) self focusing and spatial solitons lies on semiconductor materials, because of the small band gap and fast response time [2, 3]
A high gain has been obtained, the experiments have shown a strong dependence of the gain on the preexposure time; this disadvantage has been eliminated by doping SPS with tellurium (Te), which, while improving its stability and sensitivity in near IR, eliminates the electron-hole competition observed in some undoped samples
Summary
Self-trapped beams in photorefractive crystals can generate their own waveguide [1] Such light guides are especially interesting if they can be generated at near infrared wavelengths and if they can be reconfigured rapidly, which leads to interesting perspectives for applications such as optical routing, steering or switching. Much of the interest in near infrared (IR) self focusing and spatial solitons lies on semiconductor materials, because of the small band gap and fast response time [2, 3]. We present results of near infrared self focusing in a wide band-gap semiconductor with large electro-optic nonlinearity. Near infrared optical phase conjugation have shown that SPS response time is more than two order of magnitude faster than that of most conventional photorefractive materials at light intensities of 20 W/cm2 [6]. An electric field of 300, 700 and 1000 V/cm respectively was applied in the X direction of the crystal which allows to take advantage of the largest EO coefficient r111 of SPS
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