Abstract
Photoluminescence (PL) properties of bismuth (Bi) doped porous silica thin films annealed at various temperatures and in different atmospheres were studied. The near infrared (NIR) luminescence depended strongly on the annealing atmosphere and temperature. To reveal the origin of the NIR luminescence, we performed comprehensive PL studies including steady state and time-resolved PL measurements at 8–300 K in wide excitation (250–500 nm) and detection (400–1550 nm) wavelength ranges. It was revealed that multiple Bi luminescence centers, such as Bi3+, Bi2+, Bi+, and Bi dimer, are stabilized in porous silica.
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