Abstract
We have proposed a method to achieve near-field imaging spectroscopy of single semiconductor quantum dots with high sensitivity by using an optical mask layer of a phase-change material. Sequential formation and elimination of an amorphous aperture allows imaging spectroscopy with high spatial resolution and high collection efficiency. We present numerical simulation and experimental result that show the effectiveness of this technique. Inspired by this optical mask effect, a new approach which can precisely control the emission energy of semiconductor quantum dots has been proposed. This method uses the volume expansion of a phase change material upon amorphization, which allows reversible emission energy tuning of quantum dots. A photoluminescence spectroscopy of single quantum dots and simulation were conducted to demonstrate and further explore the feasibility of this method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
