Near-infrared light emitting devices from Er doped silica thin films via introducing SnO2 nanocrystals

Abstract

To get high performance light emitting devices on Si platform with emission wavelength at 1.55 μm is a challenge for future Si-based opto-electronic integration chips. In this paper, we fabricated near-infrared light-emitting devices based on Er/SnO2 co-doped silica thin films. The introduction of SnO2 nanocrystals with controllable size and density not only contributes to the near-infrared light emission enhancement of Er3+ ions at 1.55 μm, but also provides an effective carrier transport channel to realize efficient and stable electro-luminescence. The corresponding devices exhibit an external quantum efficiency of 5.4% at near infrared light region and the power efficiency is about 1.52 × 10−3. Our present work lays a solid foundation for facilitating Si-based light source towards practical application in the field of optoelectronic interconnection.