Abstract
AbstractWe report on the observation of intersubband luminescence at room temperature from GaN/AlN quantum wells and quantum dots. The quantum wells are designed to exhibit three bound states in the conduction band. Optical pumping resonant with the e1‐e3 transition (λ = 0.98 μm) is used to populate the e3 excited state. Emission corresponding to the e3‐e2 transition is observed peaked at 2.13 (2.3) μm for heavily (lightly) doped quantum wells. We also report on the observation of room temperature emission at λ ≈ 1.5 μm from a stack of GaN/AlN QDs through resonantly‐enhanced Raman scattering involving GaN LO‐phonons. The quantum dot emission is ascribed to the pz‐s intraband transition of the dots. We show that this process provides room for population inversion. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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