Abstract
We propose a near-infrared image recovery method based on modulation instability in the photorefractive semiconductor CdZnTe:V. The formation mechanism of modulation instability in CdZnTe:V is discussed, and the theoretical gain model is derived. Theoretical results of optical image recovery at 1 µm and 1.5 µm wavelengths demonstrate that the maximum cross-correlation gain is 2.6 with a signal to noise intensity ratio of 0.1. These results suggest that our method could be one of potential aids for near-infrared imaging.
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