Abstract
The scattering rate and free-carrier optical-absorption coefficient for nonpolar dispersionless intervalley phonon scattering are determined for interaction matrix elements of first order in the phonon wave vector. Analytic expressions are derived which include the effect of band nonparabolicity on this contribution to the scattering rate, which was previously demonstrated as the dominant mechanism for free-carrier absorption of near-infrared light in silicon. Comparison with experimental data for n-type Si shows improved correlation with the absorption coefficient in the near infrared, using deformation potentials which are consistent with the electron transport properties.
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