Abstract
Photoluminescence properties of Yb3+-doped CeO2 films annealed in different atmospheres were investigated. CeO2:Yb3+ films were deposited by electron-beam evaporation technique. Near-infrared emission around 970 nm was observed after annealing the films both in air and in Ar–H2 atmosphere, which is attributed to the Yb3+:2F5/2 → 2F7/2 transition. Optimization of the Yb3+ concentration for the 970 nm luminescence yield was also investigated. Characterized by different methods, Ce2Si2O7 was formed in the films annealed in reducing atmosphere, which was expected to be more applicable for the silicon-based optoelectronic applications.
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