Abstract
Photoluminescence properties of Yb3+-doped CeO2 films annealed in different atmospheres were investigated. CeO2:Yb3+ films were deposited by electron-beam evaporation technique. Near-infrared emission around 970 nm was observed after annealing the films both in air and in Ar–H2 atmosphere, which is attributed to the Yb3+:2F5/2 → 2F7/2 transition. Optimization of the Yb3+ concentration for the 970 nm luminescence yield was also investigated. Characterized by different methods, Ce2Si2O7 was formed in the films annealed in reducing atmosphere, which was expected to be more applicable for the silicon-based optoelectronic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.