Abstract
1.3–1.5µm Quantum dot (QD) lasers on GaAs substrates demonstrate near-ideal device parameters. Pseudomorphic 1.3µm InAs-GaAs QD lasers demonstrate low threshold current density (Jth300K < 100A/cm2), high differential efficiency (ηdiff > 80%), and low losses (α < 1.5cm–1 all realized in the same device. Characteristic temperature for the threshold current is ∼170K up to 70°C. Reduced linewidth enhancement factor is advantageous for low-chirp operation and makes it possible to suppress completely beam filamentation up to stripe widths ∼100µm. GaAs-based 1.3µm QD vertical-cavity surface-emitting lasers (VCSELs) with 8µm oxide aperture emit up to 2mW single mode continuous wave (CW) optical power. Metamorphic 1.5µm QD lasers on GaAs substrates with high quantum efficiency (ηi > 60–70%) and low losses (α < 3–4cm–1 and operating at power levels beyond 7W are fabricated.
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