Abstract
The near-field images calculation method for semiconductor surface with inhomogeneous electron distribution, formed by strong focused laser pulse, was proposed. Calculation is performed using Green function method. The main characteristic of the proposed approach is maximal usage analytical computations. The near-field images for the surface of GaAs were obtained at different points of time. Developed approach is universal and could be able to find with experimental data on time-resolved near-field microscopy some parameters of semiconductor surface such as diffusion constant and relaxation time.
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