Abstract

Photolithography is the prevalent microfabrication technology. It needs to meet resolution and yield demands at a cost that makes it economically viable. However, conventional far-field photolithography has reached the diffraction limit, which imposes complex optics and short-wavelength beam source to achieve high resolution at the expense of cost efficiency. Here, we present a cost-effective near-field optical printing approach that uses metal patterns embedded in a flexible elastomer photomask with mechanical robustness. This technique generates sub-diffraction patterns that are smaller than 1/10th of the wavelength of the incoming light. It can be integrated into existing hardware and standard mercury lamp, and used for a variety of surfaces, such as curved, rough and defect surfaces. This method offers a higher resolution than common light-based printing systems, while enabling parallel-writing. We anticipate that it will be widely used in academic and industrial productions.

Highlights

  • IntroductionWe present a cost-effective near-field optical printing approach that uses metal patterns embedded in a flexible elastomer photomask with mechanical robustness

  • We found that our fabrication protocol yielded an array of uniform and continuous Cr patterns embedded in PDMS

  • We demonstrate that our technique is a simple and powerful lithographic approach, which uses a photomask composed of chromium patterns embedded in elastomeric mask plate

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Summary

Introduction

We present a cost-effective near-field optical printing approach that uses metal patterns embedded in a flexible elastomer photomask with mechanical robustness This technique generates sub-diffraction patterns that are smaller than 1/10th of the wavelength of the incoming light. The state-of-art photolithography in the industry adopts projection printing, which requires optical elements to focus the mask image onto the wafer surface to achieve a high resolution It offers low defect density, high registration, high performance, and sub-10 nm node resolution by using extreme ultraviolet (EUV)[1,2]. Elastomeric masks utilize a phase shift originated from the structure of elastomer and provide high resolution and mechanical robustness[8,9] They lack the capability to pattern arbitrary shapes, which limits them from being a versatile lithographic tool. The combination of near-field capability for sub-diffraction pattern generation with elastomeric characteristic of the mask provides a simple, flexible, and low-cost lithographic tool that has the potential to replace EUV lithography

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