Abstract
Epitaxial lateral overgrowth (ELO) was employed for both c-plane and a-plane GaN layers on sapphire, and a more pronounced optical improvement was observed for the a-plane GaN as evidenced by the significantly increased band edge photoluminescence (PL). Room temperature near-field scanning optical microscopy studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to reduced density of dislocations, and for the a-plane ELO GaN sample the wings and the windows were clearly discernible from PL mapping. Time-resolved PL measurements revealed biexponential decays with time constants that were significantly enhanced for the a-plane ELO GaN (τ1=0.08ns, τ2=0.25ns) when compared to the non-ELO control sample but were still much shorter than those for the c-plane ELO GaN (τ1=0.26ns, τ2=0.90ns).
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