Abstract
Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented via a Stöber or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD–silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform.
Highlights
Based on substantial progress in the photoluminescent (PL) qualities of semiconductor quantum dots (QDs), which was achieved by the incessant development of colloidal synthetic methodology and sophisticated engineering of core/shell heterostructures, they have been highlighted as key materials for various optoelectronic devices including next-generation lightemitting diodes (LEDs), lasers, and luminescent solar concentrators.[1,2,3] In particular, QDs have been already commercially applied to LCD backlight units as color-converting emitters in combination with a blue light-emitting diode (LED) pumping source
We explore the embedment of multishelled InP/ZnSeS/ ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis
On the basis of the above strategy for the formation of QDs–silica, in this work, we explore the embedment of multishelled InP/ ZnSeS/ZnS QDs in silica matrix with a synthetic modi cation
Summary
Based on substantial progress in the photoluminescent (PL) qualities of semiconductor quantum dots (QDs), which was achieved by the incessant development of colloidal synthetic methodology and sophisticated engineering of core/shell heterostructures, they have been highlighted as key materials for various optoelectronic devices including next-generation lightemitting diodes (LEDs), lasers, and luminescent solar concentrators.[1,2,3] In particular, QDs have been already commercially applied to LCD backlight units as color-converting emitters in combination with a blue LED pumping source.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
