Abstract
The near-band luminescence due to both neutral donor and neutral acceptor bound excitons (D0 Ex), (A0Ex) and its phonon replicas as well as luminescence of donor-acceptor pair (DAP) and deep energy level due to undefined defect state (A band) were studied in CZT detector crystals. The near-band luminescence correlation with detector characteristics was analyzed and the results could be applied for nondestructive detector material selection. It is obtained that some parameters such as a presence and intensity of A and DAP luminescence bands, the decay kinetics in A0Ex-1LO and DAP luminescence bands, are most important characteristics for detector material characterization.
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