Abstract
Band edge related low temperature photoluminescence of a strained Si 0.985C 0.015 bulk alloy layer grown by molecular beam epitaxy on a Si (100) substrate has been investigated. The high quality layer was grown to a thickness of 1500 Å and was found to be pseudomorphic and tensially strained. We report two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and an intense deep level luminescence peak around 0.778 eV. The band edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy. We also observe a red shift of the energy gap of Si 0.985C 0.015 alloy with respect to Si, contrary to what is predicted according to the bulk alloy effect.
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