Abstract
The potential applications of memristors in the post-Moore era of rapidly developing next-generation artificial intelligence and high-frequency communication technologies are immense. The effects on the resistive switching (RS) characteristics based on Ag Salt@TiO2 memristive device with a nano core-shell structure under different relative humidity (RH) environments have been investigated in this work. Negative-set/reset phenomena occurs in negative voltage region due to excessive growth of conductive filaments (CFs). When the CF returns to normal growth, the current suddenly decreases in the positive high voltage area at lower humidity, which can be explained by the dissolution and growth hindrance of the CFs. Furthermore, the coexistence of negative differential resistance (NDR) and bipolar RS at room temperature can be regulated by adjusting humidity. The current conduction mechanism of the device in both dry and humid environments were fitted using the ohmic conduction mechanism, space charge-limited current (SCLC) conduction mechanism, and Schottky emission mechanism.
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